By Topic

DC and pulsed behaviour of undoped and doped AlGaN/GaN/SiC HEMTs before and after Si/sub 3/N/sub 4/ passivation

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)

The comparison of undoped and doped devices fabricated on AIGaN/GaN heterostructure before and after passivation is investigated. The de and pulse behaviour is shown where an improvement of the drain saturation current of 22 % and 6 % in undoped and 5 xlO18 cm-3 doped sample, respectively, after the surface passivation was measured. The recovery of the drain saturation current in 4 μs of the applied pulse increased from ~73 % to ~89 % after the passivation for both, undoped and doped devices. Also the output dc and pulse characteristics of unpassivated, undoped collapse-free HEMTs are presented.

Published in:

Advanced Semiconductor Devices and Microsystems, 2004. ASDAM 2004. The Fifth International Conference on

Date of Conference:

17-21 Oct. 2004