Investigations of MOVPE growth of zinc delta doped GaAs

This work presents the study of MOVPE growth of Zn-5-doped GaAs epilayers. A basic 5-doping procedure "purge-doping-purge" was applied The influence of the growth temperature, zinc concentration in gas phase and c5-doping lime on the density and spatial distribution oj holes was investigated The electrical and optical properties of the test structures were examined using Bio-Rad EC-V PN 4300 electrochemical capacitance-voltage profiler and photoreflectance spectroscopy PR