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The PCIV (Point Contact Current-Voltage) methodfor determination afthe doping concentration profiles of Si structures on a bevelled surface is presented. The equipment initially intended for the spreading resistance (SR) method was modified considerably to allow measurements by pew technique. In this article the designed and constructed measuring device is described A calibration technique for measurements on Si and an analysis of the range of carrier concentration that can be measured by PClV technique on Si samples are presented. Also results of measurement on epitaxial and implanted Si samples are given. The results obtained by PClV method are compared with the results obtained by the spreading resistance technique (SSM.150 equipment).