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By implanting high fluence B into Mg targets, we demonstrate clearly that superconducting MgB2 thin films can be formed at a low process temperature. The superconducting transition temperature Tc values observed are dependent on the growth condition. The ion beam synthesis experimental data are discussed and compared with simulation results of the B implantation process in Mg target. We propose that ion beam synthesis of MgB2 is a potential approach for the mass production of superconducting electronics devices.