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A 150 kVA/0.3 MJ SMES voltage sag compensation system

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5 Author(s)
Xiaohua Jiang ; Dept. of Electr. Eng., Tsinghua Univ., Beijing, China ; Xiaoguang Zhu ; Zhiguang Cheng ; Xiaopeng Ren
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To protect a 110 kVA critical load from voltage sags, a demonstration SMES-based voltage sag compensator has been developed and tested. This system consists of a 150 kVA IGBT (Insulated Gate Bipolar Transistor) current source converter, a 0.3 MJ NbTi magnet and three phase-shift inductors. Experiments were carried out to test the compensation performances for both balanced and unbalanced voltage sags with a 110 kW load of resistance. The results show that the load voltage recovers in less than one cycle (20 ms) whenever a three-phase or single-phase voltage sag occurs.

Published in:

IEEE Transactions on Applied Superconductivity  (Volume:15 ,  Issue: 2 )