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RF MEMS phase shifters based on PCB MEMS technology

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3 Author(s)
Ramadoss, R. ; Electr. & Comput. Eng. Dept., Auburn Univ., AL, USA ; Sundaram, A. ; Feldner, L.M.

An X-band main-line type loaded line RF MEMS phase shifter fabricated using printed circuit based MEMS technology is reported. The phase shifter provides a phase shift of 31.6° with a minimum insertion loss of 0.56 dB at 9 GHz for an applied DC bias voltage of 40 V. These phase shifters are suitable for monolithic integration with low-cost phased arrays on Teflon or Polyimide such as low dielectric constant substrates.

Published in:

Electronics Letters  (Volume:41 ,  Issue: 11 )