Referenced Items are not available for this document.
A lateral current injection (LCI) multiquantum-well (MQW) laser having planar structure is proposed and its advantages compared with conventional vertical structure lasers. A LCI-MQW laser has been fabricated by using Si- and Zn-induced disordering of an MQW active layer. It is shown that a threshold current of 27 mA is achieved under pulsed current driven at room temperature and a very low stray capacitance of 0.27 pF is obtained at zero bias voltage.<
Published in:
Quantum Electronics, IEEE Journal of
(Volume:24
,
Issue:
12
)
Date of Publication: Dec. 1988
- Page(s):
- 2448 - 2453
- ISSN :
- 0018-9197
- INSPEC Accession Number:
- 3332281
- Digital Object Identifier :
- 10.1109/3.14375
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Dec. 1988
- Sponsored by :
- IEEE Photonics Society
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