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This paper describes recent advances in techniques to develop phase-change memories. These include a new way to facilitate low-voltage phase changes with the use of a tiny strip of amorphous semiconductor compound of germanium, antimony, and tellurium on a layer of silicon dioxide, which is connected to lateral contacts connected to current sources. This configuration allows better control of heat dissipation and use of smaller voltages to change phase. Another development is a device made with a phase-change material based on antimony-tellurium material doped with one or more of the elements of germanium, indium, silver or gallium. This doped material changes phase significantly faster than the germanium-antimony-tellurium compounds in other experiments. Efforts are also underway to create arrays containing memory cells.