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Scaling properties of GOI MOSFETs in nano scale by full band Monte Carlo simulation

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9 Author(s)
X. Y. Liu ; Inst. of Microelectron., Peking Univ., Beijing, China ; G. Du ; Z. L. Xia ; J. F. Kang
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The characteristics of both n- and p- GOI MOSFETs are simulated by 2D self-consistent full-band MC method based on quantum Boltzmann equation to evaluate the scaling behaviors between GOI and SOI MOSFETs. The simulation results indicate that both for n and p channel GOI MOSFETs have favorable scaling properties in nano-scale due to the non-stationary transport near source side especially for p channel device. But the surface roughness scattering is a critical issue that might suppress the non-stationary transport. SCE is serious in GOI devices and much thinner Ge layer has to use to optimize the performance.

Published in:

Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on  (Volume:2 )

Date of Conference:

18-21 Oct. 2004