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Picosecond injection laser: a new technique for ultrafast Q-switching

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1 Author(s)
P. P. Vasil'ev ; Optoelectron. Lab., P.N. Lebedev Phys. Inst., Acad. of Sci., Moscow, USSR

A modification of a method for self-Q-switching in a laser with an isotypic saturable absorber is suggested and implemented in a multisegmented injection laser. The method consists of the transportation of most parts of the excited absorber population to the amplifier. The carrier transport time must be less than the spontaneous recombination time in the absorber. In a three-section AlGaAs/GaAs double-heterostructure laser with modified Q-switching, optical pulses of 5 ps in duration with a repetition rate as high as 18.5 GHz and peak power above 10 W have been obtained. The latter value is the largest ever reported for a picosecond injection laser. Unique temporal and spectral features exhibited by these lasers have been observed, including the stepped variation of pulse repetition frequency, its dependence on the pump current, large emission spectral width (on the order of kT), spectral chaos and bistability

Published in:

IEEE Journal of Quantum Electronics  (Volume:24 ,  Issue: 12 )