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A new damage model for ion implantation simulation with molecular dynamics method

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7 Author(s)
Rong Wang ; Inst. of Microelectron., Peking Univ., China ; Min Yu ; Kai Zhan ; Xiaokang Shi
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A new damage model for ion implantation simulation based on molecular dynamic method is introduced in this paper. The model not only describes the formation of point defects but also describe the effect of amorphous pockets. The new model is successfully incorporated into the simulator LEACS (Ran Yajun et al., 2000). Pre-amorphization implantation (PAI) (A. Al-Bayati et al., 2000) with Sb is simulated. The simulation shows obviously better agreement with the RBS results than that achieved with point defects only. The simulation with new damage model can simulate the dose effect in implantation of impurities. Simulations As of and B into single-crystal silicon at 3 kev agree with experimental data.

Published in:

Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on  (Volume:2 )

Date of Conference:

18-21 Oct. 2004