Skip to Main Content
We propose a simple mobility model which includes lattice, crystal imperfection and grain-boundary scattering mechanisms. An empirical expression were developed for each mechanism and related to experimentally measured quantities. We studied the effect of grain size over a wide temperature range to evaluate the effective carrier mobility due to different scattering mobility. The model was found to account correctly for the experimentally observed variation and yield a reasonable good agreement.
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on (Volume:2 )
Date of Conference: 18-21 Oct. 2004