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Mobility model of polysilicon thin-film transistor (poly-Si TFT)

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2 Author(s)
Gupta, N. ; Dept. of Phys., Graphic Era Inst. of Technol.,, Dehradun, India ; Tyagi, B.P.

We propose a simple mobility model which includes lattice, crystal imperfection and grain-boundary scattering mechanisms. An empirical expression were developed for each mechanism and related to experimentally measured quantities. We studied the effect of grain size over a wide temperature range to evaluate the effective carrier mobility due to different scattering mobility. The model was found to account correctly for the experimentally observed variation and yield a reasonable good agreement.

Published in:

Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on  (Volume:2 )

Date of Conference:

18-21 Oct. 2004