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A study of the static and multigigabit dynamic effects of gain spectra carrier dependence in semiconductor lasers using a transmission-line laser model

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1 Author(s)
Lowery, A.J. ; Dept. of Electr. & Electron. Eng., Nottingham Univ., UK

The addition of carrier diffusion and gain curve peak carrier dependence to the transmission-line laser model allows the study of both the temporal and the spectral effects of this dependence. The model, including a photodiode model, is described and results for a static 860-nm device and an 8-Gb/s bit-sequence-modulated 1550-nm constricted-mesa device compare favorably with the previously obtained numerical, analytical, and experimental data

Published in:

Quantum Electronics, IEEE Journal of  (Volume:24 ,  Issue: 12 )