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Effect of the V-O complexes on oxygen precipitation in neutron-irradiated silicon

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5 Author(s)
Cui, Can ; State Key Lab. of Silicon Mater., Zhejiang Univ., Hangzhou, China ; Yang, Deren ; Ma, Xiangyang ; Xuegong Yu
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The effect of the V-O complexes on oxygen precipitation in neutron-irradiated silicon has been investigated at low temperature in this paper. It is found that oxygen precipitation has been enhanced in neutron-irradiated silicon by prolonged annealing at 750°C, which is based on denser precipitate nuclei. Furthermore, by Fourier transform infrared spectrometry (FTIR) the VO complexes can transfer into VO2 and VO3 complexes during low temperature annealing. Based on these facts, it is reasonably deduced that in neutron irradiated silicon the VO complexes can become the pre-nuclei of oxygen precipitates at low temperature, and therefore enhance oxygen precipitation.

Published in:

Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on  (Volume:3 )

Date of Conference:

18-21 Oct. 2004