By Topic

Convertibility of conduction type in Al-N codoped ZnO thin films based on DC reactive magnetron sputtering

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Guodong Yuan ; State Key Lab. of Silicon Mater., Zhejiang Univ., Hangzhou, China ; Ye, Zhizhen ; Zhu, Liping ; Qing Qian
more authors

p-type conduction in ZnO thin films was realized by an Al-N codoping method. ZnO thin films were prepared in an NH3-O2 atmosphere with the substrate temperature in the range of 360-540°C with a 20°C space. Secondary ion mass spectroscopy (SIMS) tests proved that the presence of Al facilitated the incorporation of N into ZnO. A conversion from n-type conduction to p-type in a range of temperatures has been identified by measurements of the Hall effect and spreading resistance profiles. The Nls peak is located around 405.6eV in Al-N codoped ZnO thin films, compared with 401.7eV in the N alone-doped case, which may be due to the formation of Al-N bonds. The obtained p-type ZnO films shows a resistivity of 24.5 Ωcm, hole concentration of 7.48×1017 cm-3 at room temperature. A model showing nitrogen incorporation suggests the possibility of realizing p-type ZnO films of low resistivity by optimizing thermal annealing.

Published in:

Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on  (Volume:3 )

Date of Conference:

18-21 Oct. 2004