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Comparative study of ZnO and GaN films grown by MOCVD

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5 Author(s)
Wang Li ; Educ. Minist. Eng. Res. Center for Luminescence Materials & Devices, Nanchang Univ., China ; Pu Yong ; Mo Chunlan ; Fang Wenqing
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ZnO and GaN films were grown by MOCVD. AFM, DCXRD and photoluminescence were used to study the surface morphologies, structural and optical properties of the films. By a comparison of the measurement results, it was shown that the structural and optical properties of the ZnO films are superior to the GaN films. The (102) FWHM and the free/bound exciton intensity ratio of the ZnO films are the best results ever reported for ZnO films. To evaluate the overall quality of the GaN films, an InGaN/GaN MQW LED was fabricated and the LED showed good I-V characteristics and its light output power was 6 mW at 20 mA, which indicated the good quality of the GaN layers and then indirectly suggested the high quality of the ZnO films.

Published in:

Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on  (Volume:3 )

Date of Conference:

18-21 Oct. 2004