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Optimization of device structure of SiCOI MESFET with dielectric groove isolation

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3 Author(s)
Gong Xin ; Inst. of Microelectron., Xidian Univ., China ; Zhang Jincheng ; Hao Yue

The optimization of groove width and groove depth of a SiCOI MESFET with dielectric groove isolation is studied. Simulation results show that when the groove width is 2 μm and groove depth is 0.15 μm, the breakdown voltage is greatly increased and a large decrease of the drain characteristics does not occur, and the device gains the largest output power which is equal to 13 W/mm.

Published in:

Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on  (Volume:3 )

Date of Conference:

18-21 Oct. 2004