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Decrease in interface states density of 4H-SiC MOS under high electric field stress

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7 Author(s)
Zhao, P. ; Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore ; Rusli ; Tin, C.C. ; Yoon, S.F.
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An Al/SiO2/4H-SiC metal-insulator-semiconductor (MOS) structure has been characterized using high frequency C-V measurements. By subjecting the MOS to high electric field stress (6 MV/cm), the flat-band voltage and effective oxide charge have been found to increase with stress time. In contrast, there is a decrease in the interface states density upon the electric field stress. The results can be explained by electron trapping in the complicated intermediary interfacial layer between SiO2 and 4H-SiC.

Published in:

Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on  (Volume:3 )

Date of Conference:

18-21 Oct. 2004