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Drain-induced barrier lowering effect and its dependence on the channel doping in 4H-SiC MESFETs

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5 Author(s)
Chunlin Zhu ; Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore ; Rusli ; Tin, Chin-Che ; Soon Fat Yoon
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The drain-induced barrier lowering (DIBL) effect and its dependence on the channel doping concentration in 4H-SiC metal semiconductor field effect transistors (MESFETs) have been studied using the physical drift and diffusion model. Our simulation results showed that the high drain voltage typically applied in 4H-SiC power MESFETs could drastically increase the threshold voltage when the ratio of the gate length to channel thickness (Lg/a) is less than 3. Larger channel doping concentration has also been found to enhance the DIBL effect, particularly at small Lg/a ratio. In order to minimize the DIBL effect, the ratio of Lg/a should be kept greater than 3 for practical 4H-SiC MESFETs, especially when the channel doping is more than 5×1017 cm-3.

Published in:

Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on  (Volume:3 )

Date of Conference:

18-21 Oct. 2004