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Performance of AlGaN/GaN heterostructure FETs over temperatures

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6 Author(s)
Chien-Chi Lee ; Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan ; Cheng-Feng Shih ; Lee, Chien-Ping ; Ru-Chin Tu
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The paper presents a comparison of the performance of undoped and modulation-doped AlGaN/GaN HFET devices over temperature. The results obtained indicate that the device structure has a significant influence on the device performance. The modulation-doped devices are superior to the undoped devices over the temperatures studied. The stability (the temperature dependence of device performance), however, is not as good as the undoped devices.

Published in:

Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on  (Volume:3 )

Date of Conference:

18-21 Oct. 2004

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