Performance of AlGaN/GaN heterostructure FETs over temperatures

The paper presents a comparison of the performance of undoped and modulation-doped AlGaN/GaN HFET devices over temperature. The results obtained indicate that the device structure has a significant influence on the device performance. The modulation-doped devices are superior to the undoped devices over the temperatures studied. The stability (the temperature dependence of device performance), however, is not as good as the undoped devices.