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InSb-based quantum well field-effect transistors, with gate length down to 0.2 μm, are fabricated for the first time. Hall measurements show that room temperature electron mobilities over 30,000 cm 2V-1s-1 are achieved with a sheet carrier density over 1×1012 cm-2 in a modulation doped InSb quantum well with AlxIn1-xSb barrier layers. Devices with 0.2 μm gate length and 20% Al barrier exhibit DC transconductance of 625 μS/μm and fT of 150 GHz at VDS =0.5V. 0.2 μm devices fabricated on 30% Al barrier material show DC transconductance of 920 μS/μm at VDS = 0.5 V. Benchmarking against state-of-the-art Si MOSFETs indicates that InSb QW transistors can achieve equivalent high speed performance with 5-10 times lower dynamic power dissipation and therefore are a promising device technology to complement scaled silicon-based devices for very low power, ultra-high speed logic applications.