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50 nm T-gates InP high electron mobility transistors (HEMTs) with a 70% indium channel were fabricated using a very robust fabrication process based on a novel UVIII/LOR/PMMA resist stack e-beam lithograph technology and on a "digital" gate recess technology. A typical device exhibited a gm of 1400 mS/mm and an ft of 420 GHz. A source and drain saturation current (IDSS) uniformity of 40 A/mm, a threshold voltage uniformity of 10 mV and a functional yield of 96% were also achieved.
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on (Volume:3 )
Date of Conference: 18-21 Oct. 2004