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0.15 μm PHEMT 80 Gb/s selector

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5 Author(s)
Shoujun Yang ; Inst. of RF-&OE-ICs, Southeast Univ., Nanjing, China ; Zhigong Wang ; En Zhu ; Jun Feng
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To avoid the drawbacks of conventional selectors, a newly designed one is presented. In this chip, lumped devices are replaced by distributed ones, for example transmission lines instead of inductors. The bottleneck in the realization of the high speed selector is broken through by designing a third order Butterworth filter. The problem in input matching is also solved by using the same type of filter. It is guaranteed that this chip, tapped out with 0.15 μm PHEMT (pseudomorphic high electron mobility transistor) technology, can work up to 80 Gb/s by analyzing the results obtained at 80, 90, and 100 Gb/s.

Published in:

Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on  (Volume:3 )

Date of Conference:

18-21 Oct. 2004