System Maintenance:
There may be intermittent impact on performance while updates are in progress. We apologize for the inconvenience.
By Topic

Electrical properties of Ba0.8Sr0.2TiO3 thin film with NTC effect [thin film resistor]

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Liu, Y.R. ; Dept. of Appl. Phys., South China Univ. of Technol., Guangzhou, China ; Lai, P.T. ; Li, G.Q. ; Li, B.
more authors

Ba0.8Sr0.2TiO3 thin films, deposited on a SiO2/Si substrate by an argon ion-beam sputtering technique, are used to fabricate thin-film resistors by standard integrated-circuit technology. The resistance-temperature characteristics of the thin-film resistor show that the thin-film resistor has good thermal sensitivity with negative temperature coefficient from room temperature to 200°C (-5.3%°C-1 at 30°C for a test voltage of 6 V) as opposed to the positive temperature coefficient of the same material in sintered ceramic form. The current-voltage characteristics reveal that in the low-voltage region,. thermionic emission is dominant, while in the high-voltage range, a space-charge limited conduction mechanism plays a major role. In the medium-voltage range, there is the normal ohmic behavior. The effects of frequency on the impedance of the thin-film resistor at various temperatures are also investigated.

Published in:

Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on  (Volume:3 )

Date of Conference:

18-21 Oct. 2004