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The effect of calcination temperature on nanosized tin oxide thin film

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6 Author(s)
Liu, Xiaodi ; Inst. of Microelectron., Peking Univ., Beijing, China ; Dacheng Zhang ; Ting Li ; Wang Wei
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The effect of calcination on nanosized tin oxide film prepared by direct current reactive magnetron sputtering is investigated. The tin oxide semiconductors were calcined at different temperatures ranging from 400°C to 900°C. The testing results from SEM, XRD, XPS and the HP4145B semiconductor analyzer show that the composition, crystallinity and the resistance of the thin films change with the variation of calcination temperature.

Published in:

Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on  (Volume:3 )

Date of Conference:

18-21 Oct. 2004