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Fabrication and characterization of silicon on permalloy film

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3 Author(s)
Zhang, Lei ; Inst. of Microelectron., Tsinghua Univ., Beijing, China ; Ning Deng ; Peiyi Chen

Good interface is the key point of effective spin-polarized injection from ferromagnet to semiconductor. Growth of silicon on permalloy film has been performed by the ultra-high vacuum chemical vapor deposition (UHV/CVD) system. The topography and phase images of samples have been studied by AFM to characterize the sample surface with different growth temperature and time. The magnetic images have been obtained by MFM for magnetic investigation. Those images show that a polysilicon layer with uniform grain size can be grown on permalloy film with appropriate growth conditions.

Published in:

Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on  (Volume:3 )

Date of Conference:

18-21 Oct. 2004

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