By Topic

Measurement of the thermal conductivity of undoped polysilicon thin film over 300K to 400K

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Zhichao Lv ; Inst. of Microelectron., Tsinghua Univ., Beijing, China ; Jiahui Yuan ; Lilin Tian ; Litian Liu
more authors

Polysilicon layers are widely used in microelectronic and microelectromechanical devices. The layer's thermal parameters are very important for the design and fabrication of the device. However, little literature has investigated the polysilicon thin film's lateral thermal conductivity, especially at temperatures between 300 K and 400 K, with a thickness less than 300 nm. This work measures the lateral thermal conductivity of suspended undoped low-pressure chemical-vapor deposition (LPCVD) polysilicon layers, which are of 260 nm and 200 nm in thickness. The measurement is performed by using steady-state Joule heating and electrical-resistance thermometer in patterned platinum lines. The thermal conductivity is measured at three different temperatures. According to the measurement data, the thermal conductivity of the polysilicon thin films decreases with the reduction of the thin film's thickness. Meanwhile, the thermal conductivity is almost invariable in the range from 300 K to 400 K.

Published in:

Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on  (Volume:3 )

Date of Conference:

18-21 Oct. 2004