By Topic

Ge condensation characterization of SiGe-on-insulator structure fabricated by separation of oxygen implantation

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Z. J. Chen ; Shanghai Inst. of Microsyst. & Inf. Technol., Chinese Acad. of Sci., Shanghai, China ; F. Zhang ; Z. X. Zhang ; J. Bo
more authors

In this paper we present a virtual strained silicon substrate, full relaxed SiGe-on-insulator (SGOI)(Ge% = 15%) structure with stepwise buffer layers and high quality box layer, fabricated by separation by implantation of oxygen (SIMOX) technique. The Ge condensation effect of the top SiGe layer is found and its dependence on the SIMOX parameters is also reviewed. This result is a unique way to get high Ge content of SGOI/Si heterostructures.

Published in:

Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on  (Volume:3 )

Date of Conference:

18-21 Oct. 2004