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Ge condensation characterization of SiGe-on-insulator structure fabricated by separation of oxygen implantation

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6 Author(s)
Chen, Z.J. ; Shanghai Inst. of Microsyst. & Inf. Technol., Chinese Acad. of Sci., Shanghai, China ; Zhang, F. ; Zhang, Z.X. ; Bo, J.
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In this paper we present a virtual strained silicon substrate, full relaxed SiGe-on-insulator (SGOI)(Ge% = 15%) structure with stepwise buffer layers and high quality box layer, fabricated by separation by implantation of oxygen (SIMOX) technique. The Ge condensation effect of the top SiGe layer is found and its dependence on the SIMOX parameters is also reviewed. This result is a unique way to get high Ge content of SGOI/Si heterostructures.

Published in:

Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on  (Volume:3 )

Date of Conference:

18-21 Oct. 2004