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Fabrication of silicon on plasma synthesized SiOxNy by ion-cut process

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6 Author(s)
Zhu, M. ; Dept. of Phys. & Mater. Sci., City Univ. of Hong Kong, China ; Chen, P. ; Fu, R.K.Y. ; Liu, W.L.
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One of the main disadvantages of conventional silicon-on-insulator (SOI) materials is that the buried oxide layer has poor thermal conductivity and so the self-heating effect becomes a problem. In order to mitigate this effect, the single crystalline Si/SiOxNy/Si substrate structures were successfully formed using Si/SiOxNy direct wafer bonding and the hydrogen induced layer transfer method. Cross-sectional high-resolution transmission electron microscopy (HRTEM) and spreading resistance (SPR) reveal that the bonded interface is abrupt and the top Si layer exhibits nearly perfect single crystalline quality.

Published in:

Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on  (Volume:3 )

Date of Conference:

18-21 Oct. 2004