By Topic

MBE-based materials growth for high fT SiGe HBT

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

11 Author(s)
Zhang Jing ; Nat. Labs of Analog Integrated Circuits, Chongqing, China ; Li Kaicheng ; Kibbel, H. ; Gruhle, A.
more authors

In this paper, the technology of MBE-based materials growth for high cutoff frequency (fT) SiGe HBTs was described. To grow a high-performance SiGe/Si hetero-junction multiple-structure, technologies such as the doping of secondary implantation (DSI), low-temperature doping, and antimony (Sb) surface pre-deposition, have been presented in the course of molecular beam epitaxy (MBE). The cutoff frequency of a mesa SiGe HBT, which was developed by using a SiGe/Si hetero-junction multi-structure, reached 105 GHz. In addition, key technologies such as the wafer surface pre-treatment before epitaxial growth, the temperature control of SiGe layer growth, etc., were introduced in detail.

Published in:

Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on  (Volume:3 )

Date of Conference:

18-21 Oct. 2004