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Interface states intensity (Nss) and minority carrier generation lifetime (τg) were evaluated for strained Si (St-Si)/SiGe wafers using deep level transient spectroscopy (DLTS) and metal-oxide-semiconductor (MOS) transient capacitance (C-t) methods. The dependences of Nss and τg on St-Si thickness (dSi) and Ge fraction (Ge%) were shown clearly. By the same gate film fabrication and electrical measurements for a bulk Si MOS, the values of Nss and τg of St-Si MOS are similar to those of bulk Si MOS, showing good wafer quality.
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on (Volume:3 )
Date of Conference: 18-21 Oct. 2004