An RF low-noise broadband amplifier processed in 0.35um SiGe technology

The RF low-noise broadband amplifier in 0.35 /spl mu/m SiGe technology, which has been successfully processed, was described in this paper. The amplifier has advantages such as wide bandwidth (/spl ges/3.2 GHz), low noise figure (NF/spl les/2.0 dB), high power gain (S/sub 21//spl ges/27 dB), its output power at 1dB gain compression is greater than 9 dBm, and OIP/sub 3/ is greater than or equal to 23 dBm. The design concept and the technology features of the broadband amplifier were described. The computer simulated results and the measured parameters of practical products were given, indicating that the process technology conforms well to the design technology.