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An RF low-noise broadband amplifier processed in 0.35um SiGe technology

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2 Author(s)
Luncai Liu ; Nat. Labs of Analog IC, Chongqing, China ; Zhengfan Zhang

The RF low-noise broadband amplifier in 0.35 μm SiGe technology, which has been successfully processed, was described in this paper. The amplifier has advantages such as wide bandwidth (≥3.2 GHz), low noise figure (NF≤2.0 dB), high power gain (S21≥27 dB), its output power at 1dB gain compression is greater than 9 dBm, and OIP3 is greater than or equal to 23 dBm. The design concept and the technology features of the broadband amplifier were described. The computer simulated results and the measured parameters of practical products were given, indicating that the process technology conforms well to the design technology.

Published in:

Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on  (Volume:3 )

Date of Conference:

18-21 Oct. 2004