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Cascadable direct-coupled wideband SiGe HBT MMIC [amplifier]

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7 Author(s)
Wentao Huang ; Inst. of Microelectron., Tsinghua Univ., Beijing, China ; Xiaoyi Xiong ; Gaoqing Li ; Wei Zhang
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This paper reports the design and performance of a single-stage Darlington-structure SiGe hetero-junction bipolar transistor (HBT) microwave monolithic integrated circuit based on an advanced SiGe HBT technology. The circuit has 11.6 dB gain at 850 MHz and 8.0 dB gain at 1950 MHz. The input and output VSWRs are 3.01:1 and 2.66:1 at 3000 MHz, respectively. This circuit consumes 140 mW DC power and has a chip size of 0.32×0.42 mm2.

Published in:

Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on  (Volume:3 )

Date of Conference:

18-21 Oct. 2004