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High quality single-layer and multilayer nanostructured Si1-xGex have been successfully grown on Si(100) substrates at low temperature by ultra-high vacuum chemical vapor deposition (UHV/CVD). The UHV/CVD system integrated three chambers into a whole and the growth chamber base pressure of 5.0 × 10-8 Pa can be available. The nanostructures of SiGe/Si were characterized using high-resolution X-ray diffraction (HRXRD) and cross-sectional transmission electron microscopy (XTEM). The results show good crystal quality and sharp interfaces. This demonstrates further crystal quality improvements of nanostructured SiGe alloy may be available in the application of microelectronics and optoelectronics.