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A fully CMOS compatible integrated absolute pressure sensor

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3 Author(s)
Min-Xin Zhou ; Key Lab. of MEMS of Minist. of Educ., Southeast Univ., Nanjing, China ; Qing-An Huang ; Ming Qin

This paper presents a fully CMOS technology integrated capacitive absolute pressure sensor with on-chip switched capacitor integration circuitry for barometric applications. The overall sensor system process merges CMOS IC technology and a bulk micromachining process utilized after the pre-CMOS process, thus it does not change the IC technology sequence. The sensor consists of a switched capacitor interface readout circuit, a sandwich-structured capacitive transducer with a composite-membrane and a reference capacitor, all integrated on the same chip by a standard CMOS process.

Published in:

Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on  (Volume:3 )

Date of Conference:

18-21 Oct. 2004