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Field-effect transistors based on single-wall carbon nanotubes bundles

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8 Author(s)
Xiaofeng Wang ; Dept. of Microelectron., Peking Univ., Beijing, China ; Ao Guo ; Lunhui Guan ; Zujin Shi
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The electric transport properties of single-walled carbon nanotubes (SWNT) bundles array have been measured. We report the fabrications and performances of nanoscale field-effect transistors (FET) based on SWNT bundles array. In addition to p-type FET, we present a new technique by which ambipolar FETs can be fabricated. The Ion/ Ioff ratio of ambipolar FETs approaches 5 orders of magnitude. The reasons for ambipolar character are also qualitatively discussed. Both p-type and ambipolar FETs exhibit hysteresis in their electrical characteristics.

Published in:

Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on  (Volume:1 )

Date of Conference:

18-21 Oct. 2004