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This paper presents basic characteristics of the room temperature plasma oxidation (RTPO) process for preparation of less than 2 nn thick layers of SiO2 and high k layers of TiO2. The oxidation rate follows a power law with a proportionality constant depending on pressure, plasma power, temperature and reagent gas. The exponent depends only on the reactive gas. Surface roughness similar to thermal oxide films, surface state density below 3×1011 cm-2 and current density in the expected range for each corresponding thickness, were obtained by RTPO in a parallel plate reactor, at 180 mW/cm2 and pressure range between 0.07 and 0.5 torn using O2 as reactive gas. MOS capacitors with TiO2 and stacked layers of TiO2 over SiO2 with equivalent thickness down to 2 nm were obtained and characterized.