Design, fabrication and characterization of a bi-directional insulated gate bipolar transistor

In this paper, a new bi-directional insulated-gate bipolar transistor (BIGBT) is proposed and demonstrated for the first time. The device is fabricated on a double-side polished silicon substrate using a conventional CMOS compatible IGBT technology. A double side DCB (direct bond copper) packaging method with electrodes on both sides of the BIGBT device is used. The device can block 1700V in both the forward and reverse directions. In the on-state, at a current level of 2A the forward voltage drops in the forward and reverse directions are matched within 5 %. The switching measurements show that the BIGBT also has a high degree of symmetry on the switching characteristics with the rise times and fall times of the top and bottom devices matched within approximately 10% and 14%, respectively.