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Wide tuning-range MOS varactors based on SOI

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5 Author(s)
Tao Yan ; Inst. of Microelectron., Peking Univ., Beijing, China ; Guoyan Zhang ; Hao Shi ; Ru Huang
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MOS varactors based on SOI substrate with very wide tuning-range are presented in this paper. Compared with bulk silicon substrate, varactors based on SOI substrate have wider tuning-range due to less parasitic capacitance. These varactors including n-type accumulation mode MOS varactor (AMOS), n-type gated diode (GD) and p-type GD. are fabricated with the same CMOS process technology and compared with bulk ones. Results show SOI varactors' tuning range is wider than bulk ones to a large extent.

Published in:

Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on  (Volume:1 )

Date of Conference:

18-21 Oct. 2004