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Body effect principle applied to RF CMOS circuits

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3 Author(s)
Jean-Baptiste, B. ; IXL Lab., Talence, France ; Thierry, T. ; Herve, L.

After a theoretical and analytic study of the body effect in MOS transistors, this paper proposes two different approaches of this parasitic phenomenon. Thanks to these models, a design methodology, which takes advantage of the bulk input, can be brought into play. Thus, turning the CMOS drawback into an analog advantage, it gives an efficient alternative to overcome the CMOS VLSI wireless mass-market design constrains. In order to illustrate this advance, two RF building blocks are presented in this paper. Well suited to low power/low voltage applications, these circuits implemented in a 0.18 μm CMOS VLSI technology are well matched to multi-standard architectures and system on chip implementations.

Published in:

Microelectronics, 2004. ICM 2004 Proceedings. The 16th International Conference on

Date of Conference:

6-8 Dec. 2004

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