By Topic

Luminescence tuning in GaN layers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Sanchez-R., V.M. ; Seccion de Electronica del Estado Solido, Departamento de Ingenieria Electrica, CINVESTAV, Av. IPN 2508, 07340 Mexico, D.F. ; Escobosa, A. ; Navarro, G. ; Avendano, M.A.

GaN layers were grown at low pressure by nitridation of GaAs substrates. The films showed photoluminescence when excited with ultraviolet light. The luminescence color could be tuned by adjusting the growth parameters.

Published in:

Electrical and Electronics Engineering, 2004. (ICEEE). 1st International Conference on

Date of Conference:

8-10 Sept. 2004