By Topic

Continuous and precise work function adjustment for integratable dual metal gate CMOS technology using Hf-Mo binary alloys

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Tzung-Lin Li ; Inst. of Electron., Nat. Chiao-Tung Univ., Hsinchu, Taiwan ; Chia-Hsin Hu ; Wu-Lin Ho ; Wang, H.C.-H.
more authors

We demonstrate for the first time a continuous and almost linear work function adjustment between 3.93 and 4.93eV using HfxMo(1-x) binary alloys deposited by co-sputtering. In view of the process integration, dual work function metal gate technology using Mo and HfxMo(1-x) formed by metal intermixing was proposed. Work function values were verified to be a function of the thickness ratio and accurate work function adjustment can be possible. Furthermore, one can be allowed to get around the thermal stability issue by choosing an appropriate total metal thickness corresponding to the thermal budget subsequent to gate deposition, since the thermal budget required for metal intermixing depends on the total metal thickness.

Published in:

Electron Devices, IEEE Transactions on  (Volume:52 ,  Issue: 6 )