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Ultralow leakage In0.53Ga0.47As p-i-n photodetector grown on linearly graded metamorphic InxGa1-xP buffered GaAs substrate

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4 Author(s)
Gong-Ru Lin ; Dept. of Photonics, Nat. Chiao Tung Univ., Hsinchu, Taiwan ; Hao-Chung Kuo ; Lin, Chi-Kuan ; Milton Feng

A novel top-illuminated In0.53Ga0.47As p-i-n photodiodes (MM-PINPD) grown on GaAs substrate by using linearly graded metamorphic InxGa1-xP (x graded from 0.49 to 1) buffer layer is reported. The dark current, optical responsivities, noise equivalent power, and operational bandwidth of the MM-PINPD with aperture diameter of 60 μm are 13 pA, 0.6 A/W, 3.4×10-15 W/Hz12/, and 7.5 GHz, respectively, at 1550 nm. The performances of the MM-PINPD on GaAs are demonstrated to be comparable to those of a similar device made on InGaAs-InP substrate.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:41 ,  Issue: 6 )

Date of Publication:

June 2005

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