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Opposing dependence of the electron and hole gate currents in SOI MOSFETs under uniaxial strain

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5 Author(s)
Wei Zhao ; Dept. of Electr. Eng., Univ. of Notre Dame, IN, USA ; A. Seabaugh ; V. Adams ; D. Jovanovic
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The influence of tensile mechanical stress on ultrathin oxide gate currents in advanced partially depleted silicon-on-insulator MOSFETs is reported. Strain is applied uniaxially, perpendicular to the direction of current flow by bending of thinned, fully processed wafers with a gate oxide thickness of less than 1.5 nm. The gate currents of the n-channel and p-channel MOSFETS are found to change linearly and in opposite (opposing) directions as a function of uniaxial strain. The nMOS transistors generally exhibit a decrease with applied tensile strain, while the nMOS transistors show increasing gate current with strain. The observed dependences are consistent with a gate current controlled by direct tunneling and perturbed by stress-induced changes in the energy band structure.

Published in:

IEEE Electron Device Letters  (Volume:26 ,  Issue: 6 )