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High-performance poly-silicon TFTs incorporating LaAlO3 as the gate dielectric

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5 Author(s)
Hung, B.F. ; Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Hsinchu, Taiwan ; Chiang, K.C. ; Huang, C.C. ; Chin, Albert
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We have integrated a high-κ LaAlO3 dielectric into low-temperature poly-Si (LTPS) thin-film transistors (TFTs). Good TFT performance was achieved-such as a high drive current, low threshold voltage and subthreshold slope, as well as an excellent on/off current ratio and high gate-dielectric breakdown field. This was achieved without hydrogen passivation or special crystallization steps. The good performance is related to the high gate capacitance density and small equivalent-oxide thickness provided by the high-κ dielectric.

Published in:

Electron Device Letters, IEEE  (Volume:26 ,  Issue: 6 )