By Topic

High-performance laser diodes with emission wavelengths above 1100 nm and very small vertical divergence of the far field

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Bugge, F. ; Ferdinand-Braun-Inst. fur Hochstfrequenztechnik, Berlin, Germany ; Wenzel, H. ; Sumpf, B. ; Erbert, G.
more authors

The effect of variations in the vertical structure on the performance of AlGaAs-GaAs laser diodes with an InGaAs quantum well (QW) emitting around 1120 nm was investigated. With very thick waveguide layers, more than 95% of the output power is enclosed in an angle smaller than 35/spl deg/. This allows the use of fast axis collimators with a small numerical aperture. Broad area laser diodes with 100-μm stripe width, an optimized doping profile, and a double QW emit more than 12 W and show reliable operation at 5 W.

Published in:

Photonics Technology Letters, IEEE  (Volume:17 ,  Issue: 6 )