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Room temperature lasing emission at 1.338 and 1.435 μm with threshold current densities of 1518 and 1755 A/cm2, respectively, is obtained in broad area GaInNAs-GaAs laser diodes (LDs) grown by molecular beam epitaxy. The 1.338-μm LDs show a power output per facet up to 0.20 W/A, a characteristic temperature (T0) of 78 K, and an external transparency current density (Jtr) of 0.77 kA/cm2. Increasing the lasing wavelength to 1.435 μm results in a larger Jtr of 1.16 kA/cm2 and a lower T0 of 62 K, due to larger nonradiative recombination. However, the 1.435-μm LDs still display a power output per facet up to 0.15 W/A, and a high internal quantum efficiency of 52%. These improved performances are achieved without the need to use strain compensation layers, Sb as a surfactant during the quantum-well growth, or a postgrowth thermal anneal cycle.