Referenced Items are not available for this document.
(Ga,In)(N,As)/GaAs single quantum well lasers have been grown by molecular beam epitaxy. Room temperature pulsed operation at a wavelength of 1515 nm is achieved. As-cleaved 1000 μm-long lasers have a threshold current density of 4.06 kA/cm2 and a slope efficiency of 0.075 W/A per facet.
Published in:
Electronics Letters
(Volume:41
,
Issue:
10
)
Date of Publication: 12 May 2005
- Page(s):
- 595 - 596
- ISSN :
- 0013-5194
- INSPEC Accession Number:
- 8480240
- Digital Object Identifier :
- 10.1049/el:20050487
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 27 June 2005
- Issue Date :
- 12 May 2005
- Sponsored by :
- Institution of Engineering and Technology
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